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PhD Candidate in High-Frequency Wide-Bandgap Power Conversion Technologies

NTNU - Norwegian University of Science and Technology

Høgskoleringen 1, 7491 Trondheim

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Job Description

PhD Candidate in High-Frequency Wide-Bandgap Power Conversion Technologies

The Department of Electric Energy (IEL) at NTNU is seeking a highly motivated candidate for a full-time (100%) PhD position for 3 years. You will join the research group Power Electronics and Electrical Machines (PEM) at IEL, where we foster an open, inclusive, and collaborative working environment.

About the project

High-frequency wide-bandgap (SiC/GaN) semiconductor technologies are enabling significant improvements in efficiency, power density, and switching performance for next-generation power conversion systems. This PhD project will investigate advanced high-frequency power conversion technologies through analytical modelling, multi-domain optimization, hardware development, and experimental validation.

The PhD candidate will investigate one or more of the following areas:

  • High-frequency converter architectures, modulation techniques, and advanced switching strategies
  • Wide-bandgap semiconductor devices (SiC/GaN), switching behaviour, and gate-drive optimization
  • Electromagnetic compatibility, electro-thermal modelling, and reliability-oriented design methodologies

Duties of the position

  • Carry out research of high quality within the framework described above.
  • Academic publications and popular science dissemination.
  • Participate in activities in the research group Power Electronics and Electrical Machines (PEM).
  • Participate in international activities such as conferences and/or research stays at foreign educational institutions.
  • Complete academic training consisting of coursework corresponding to a minimum of 30 ECTS.

Requirements

  • You must have a relevant Master's degree in power electronics corresponding to a five-year Norwegian course.
  • You must have a strong academic background with an average grade from your Master's degree study equal to B or better.
  • You must meet the requirements for admission to the Faculty's Doctoral Programme.
  • You must have English language skills, both written and spoken, corresponding to the scale B2 in the CEFR.
  • You must be physically present and available to the institution on a daily basis.

Skills

Power electronicsAnalytical modellingHardware developmentExperimental validationWide-bandgap semiconductor technologies (SiC/GaN)PythonMatlabC/C++

Salary

NOK 550 800,- per annum

Experience

junior

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